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American Institute of Physics, Applied Physics Letters, 14(100), p. 143505

DOI: 10.1063/1.3700743

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Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

Journal article published in 2012 by M. Anbarasu, Martin Wimmer, Gunnar Bruns, Martin Salinga, Matthias Wuttig ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe6 Ovonic threshold switching (OTS) device. The voltage dependence of the threshold switching process has been studied, revealing switching in less than 5 ns in the fastest case. A constant holding voltage is observed for the different voltage pulses applied, which is an indicative for a stable on state in the amorphous phase. In addition, the potential of GeTe6 devices as OTS selectors is validated. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700743]