We report on the optical properties of high-quanlity ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrates by pulsed laser deposition. The temperature dependent photoluminescence (PL) of ZnO/ZnCdO SQWs exhibits an inconspicuous S-shaped property due to the weak carrier localization effect, as a consequence of the slightly inhomogeneous Cd distribution in the well layer as well as the smooth interfaces. The integrated PL intensity of the higher Cd SQW decreases faster than that of the lower sample with increasing temperature, indicating the presence of interface barrier in high Cd content SQWs.