Published in

American Institute of Physics, Journal of Applied Physics, 1(119), p. 015302, 2016

DOI: 10.1063/1.4939281

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Electronic structure of antimonene grown on Sb2Te3 (111) and Bi2Te3 substrates

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We explore the formation of single bilayer Sb(111) ultrathin film (Antimonene) on Bi2Te3 and Sb2Te3 substrates for the first time, which is theoretically predicated to be a robust trivial semiconductor but can be tuned to a 2D TI by reducing the buckling height. From angle-resolved photoemission spectroscopy measurements, the antimonene can be well grown on the two surfaces and shows clear band dispersion. The electronic structure of the antimonene shows similar character on the two surfaces, but due to the interfacial strain effect, the bands of antimonene on Bi2Te3 are flatter than on Sb2Te3, which attributes to Bi2Te3 substrate lattice constants lager than Sb2Te3. At the same time, the charge transfer effect is also observed through core level shift, which influences the band dispersion simultaneously.