Hydrothermal diamond anvil cells (HDACs) provide facile means for coupling synchrotron X-ray techniques with pressure up to 10 GPa and temperature up to 1300 K. This manuscript reports on an application of the HDAC as an ambient-pressure sample environment for performing in situ defect annealing and thermal expansion studies of swift heavy ion irradiated CeO₂ and ThO₂ using synchrotron X-ray diffraction. The advantages of the in situ HDAC technique over conventional annealing methods include rapid temperature ramping and quench times, high-resolution measurement capability, simultaneous annealing of multiple samples, and prolonged temperature and apparatus stability at high temperatures. Isochronal annealing between 300 and 1100 K revealed two-stage and one-stage defect recovery processes for irradiated CeO₂ and ThO₂, respectively, indicating that the morphology of the defects produced by swift heavy ion irradiation of these two materials differs significantly. These results suggest that electronic configuration plays a major role in both the radiation-induced defect production and high-temperature defect recovery mechanisms of CeO₂ and ThO₂.