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Optica, Optics Express, S3(22), p. A779, 2014

DOI: 10.1364/oe.22.00a779

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On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Journal article published in 2014 by Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhengang Ju, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun ORCID, Hilmi Volkan Demir
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.