In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 °C i.e., 60–70 °C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.