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Nature Research, Nature Communications, 1(4), 2013

DOI: 10.1038/ncomms2394

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A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub>

Journal article published in 2013 by Yunzhong Z. Chen ORCID, N. Bovet, Felix Trier, Dennis Valbj Christensen, F. M. Qu, {Dennis Valbj Christensen, Takeshi Kasama, Niels Hessel Andersen, R. Giraud, {Niels Hessel} Andersen, Wei Zhang, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.