Published in
MAIK Nauka/Interperiodica, Glass Physics and Chemistry, 2(31), p. 173-176
DOI: 10.1007/s10720-005-0041-9
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Photoinduced transformations in Ga-Ge-S : Er films prepared by laser deposition
Journal article published in 2005 by
A. S. Tverjanovich 
,
E. N. Borisov,
O. A. Sokolova,
Y.-U. S. Tver’yanovich
,
E. N. Borisov,
O. A. Sokolova,
Y.-U. S. Tver’yanovich
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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Abstract
Films in the Ga2S3-GeS2-Er2S3 system are prepared through ultraviolet laser deposition. It is found that the films are characterized by the photobleaching effect whose magnitude can be as large as 120 nm. In this case, the refractive index decreases by 15%. The mechanism responsible for the revealed effect is proposed, and image recording is accomplished.