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American Institute of Physics, Applied Physics Letters, 21(88), p. 212509

DOI: 10.1063/1.2207555

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Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Journal article published in 2006 by T. Yamamoto, Y. Nakamura, Y.-U. A. Pashkin ORCID, O. Astafiev, J. S. Tsai
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockade devices. The method is based on creation of a proper energy gap profile along the device. In contrast to the previously used techniques, the energy gap is controlled by the film thickness. Our transport measurements confirm that the quasiparticle poisoning is suppressed and clear 2$e$ periodicity is observed only when the island is made much thinner than the leads. This result is consistent with the existing model and provides a simple method to suppress quasiparticle poisoning.