Amorphous GaN thin films are deposited on silicon substrates by magnetron sputtering.The current-voltage characteristics of the GaN Schottky diodes cannot be understood in terms of thermionic emission simply by including the effects of a series resistance and recombination current,which suggests that other current transport mechanism (space charge limited current,SCLC) is dominant.Analysis of the data indicates an equilibrium electron concentration of 1.1E4cm-3 and a trap located 0.363eV below the conduction band edge.SCLC measurements may be used to probe the properties of deep levels in the wide bandgap amorphous GaN.