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American Institute of Physics, Applied Physics Letters, 18(97), p. 183504

DOI: 10.1063/1.3514249

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Zinc Concentration Dependence Study of Solution Processed Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Dielectric

Journal article published in 2010 by Pradipta K. Nayak, T. Busai, Tito Busani, Elangovan Elamurugu, Pedro Barquinha ORCID, Rodrigo Martins, Yongtaek Hong, Elvira Fortunato
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2/V s with an Ion/Ioff ratio of 6×107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.