In absence of piezoelectric polarization along the growth axis, a- and m-plane green GaInN light emitting diodes manifest stable emission wavelength -- independent of the injection current density. The shift of the dominant wavelength is less than 8 nm when varying the forward current density from 0.1 to 38 A/cm(2). Furthermore, the light emitted from the growth surface of such non-polar structures shows a very degree of linear polarization. This is attributed to a strong valance band splitting in such anisotropically strained wurtzite GaInN quantum wells. Such light emitting diodes show a high potential for energy efficient display applications.