American Institute of Physics, Applied Physics Letters, 10(83), p. 1953
DOI: 10.1063/1.1608489
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The evolution of {113} defects as a function of time and depth within Si implant-generated defect profiles has been investigated by transmission electron microscopy. Two cases are considered: one in which the {113} defects evolve into dislocation loops, and the other, at lower dose and energy, in which the {113} defects grow in size and finally dissolve. The study shows that dissolution occurs preferentially at the near-surface side of the defect band, indicating that the silicon surface is the principal sink for interstitials in this system. The results provide a critical test of the ability of physical models to simulate defect evolution and transient enhanced diffusion.