Published in
2014 International Semiconductor Laser Conference
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Electrically injected GaAsBi quantum well lasers
Journal article published in 2014 by
S. J. Sweeney,
I. P. Marko,
S. R. Jin,
K. Hild,
Z. Batool,
P. Ludewig 
,
L. Natterman,
Z. Bushell ,
W. Stolz,
K. Volz,
C. A. Broderick,
M. Usman,
P. E. Harnedy,
E. P. Oreilly,
R. Butkute
and other authors.
,
L. Natterman,
Z. Bushell ,
W. Stolz,
K. Volz,
C. A. Broderick,
M. Usman,
P. E. Harnedy,
E. P. Oreilly,
R. Butkute
and other authors.
This paper is available in a repository.
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Abstract
GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.