Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach

American Scientific Publishers, Science of Advanced Materials, 8(7), p. 1629-1635

Journal article published in 2015 by A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, A. E. Nikolaev, E. E. Zavarin, S. O. Usov, M. A. Yagovkina, M. J. Hÿtch, M. Korytov, N. Cherkashin

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