The effect of hydrogen added to the rf argon discharge on the physical properties of thin CuxS films produced by rf sputtering from a Cu2S target is studied. Hydrogen content ranged from 0 to 5% of the total pressure. Electrical, structural and optical properties of films are analysed as a function of the hydrogen percentage and correlated with different processes taking place in the target and in the plasma which are monitored by glow discharge optical and mass spectroscopies (GDOS and GDMS). The produced films show resistivity values between 10−4 and 102 Ω · cm, depending on the hydrogen content during the growth, and they are correlated with X-ray diffraction measurements.