Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(21), p. 251-253, 2000
DOI: 10.1109/55.841312
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Monitoring the degradation that causes the breakdown of ultrathin (<5 nm) SiO<sub>2</sub> gate oxides
Journal article published in 2000 by
R. Rodriguez,
E. Miranda 
,
R. Pau,
J. Sune,
M. Nafria,
X. Aymerich
,
R. Pau,
J. Sune,
M. Nafria,
X. Aymerich
This paper was not found in any repository, but could be made available legally by the author.
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