Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 1(47), p. 82-89, 2000
DOI: 10.1109/16.817571
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Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
Journal article published in 2000 by
E. Miranda 
,
J. Sune,
R. Rodriguez,
M. Nafria,
X. Aymerich,
L. Fonseca,
F. Campabadal
,
J. Sune,
R. Rodriguez,
M. Nafria,
X. Aymerich,
L. Fonseca,
F. Campabadal
This paper was not found in any repository, but could be made available legally by the author.
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