The realization of defined dislocation networks by hydrophobic wafer bonding allows the characterization of electrical and optical properties of dislocations. The present paper investigates the electrical properties in samples containing only a few (up to 6) dislocations. By taking results of other analysis into account the electronic properties of individual dislocations can be described. The dislocation-induced luminescence between 1.3 mu m and 1.5 mu m was also analyzed using different types of light-emitting diodes (LED). It was shown that the emission depends on the structure of the dislocation network.