Published in

American Physical Society, Physical Review Letters, 2(72), p. 294-297

DOI: 10.1103/physrevlett.72.294

Links

Tools

Export citation

Search in Google Scholar

Local interface composition and band discontinuities in heterovalent heterostructures

Journal article published in 1994 by R. Nicolini, L. Vanzetti, Mula Guido, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni ORCID, R. Resta, A. Baldereschi, J. E. Angelo, W. W. Gerberich
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.