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American Physical Society, Physical Review Letters, 5(103), 2009

DOI: 10.1103/physrevlett.103.056404

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Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

Journal article published in 2009 by Aaron Bostwick, Jessica L. McChesney ORCID, Konstantin V. Emtsev, Thomas Seyller, Karsten Horn, Stephen D. Kevan, Eli Rotenberg
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.