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American Institute of Physics, Applied Physics Letters, 19(95), p. 193503

DOI: 10.1063/1.3262956

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Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors

Journal article published in 2009 by Pradipta K. Nayak, Jongsu Jang, Changhee Lee ORCID, Yongtaek Hong
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report the effects of lithium (Li) doping on the performance and environmental stability of solution processed zinc oxide (ZnO) thin film transistors (TFTs). It was found that appropriate amount of Li doping significantly reduced the background conductivity of ZnO films and also improved the orientation of ZnO crystallites along the c-axis. A highest field-effect mobility of 3.07 cm 2/ V   s was found for the 5 at . % Li-doped ZnO TFTs. However, 15 and 25 at . % Li-doped ZnO TFTs showed good environmental stability of I on / I off ratio with reasonable field-effect mobility.