Published in
American Institute of Physics, Applied Physics Letters, 13(79), p. 2031
DOI: 10.1063/1.1400769
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Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases
Journal article published in 2001 by
L. Di Gaspare 
,
K. Alfaramawi,
F. Evangelisti,
E. Palange,
G. Barucca,
G. Majni
,
K. Alfaramawi,
F. Evangelisti,
E. Palange,
G. Barucca,
G. Majni
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Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900 cm2/Vs at room temperature and 8.2×104 cm2/Vs at 4.2 K were obtained.