Thin films of Si3N4 were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized Si3N4 was used as a solid-state target. Deposition was carried out on a cold substrate of p-Si (1 0 0) with a resistivity of 2 Ohm cm. The Raman spectrum of the deposited Si3N4 layers has been investigated. The position of the maximum in the Raman scattering spectrum of Si3N4 layers corresponds to the Si3N4 compound and the shape of the spectrum is characteristic for the nanocrystalline state of the cubic modification of silicon nitride.