The ZnO-based Schottky diodes revealing a high rectication ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectication ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The inuence of these approaches on the diode's rectication ratio together with modeling based on the dierential approach and thermionic emission theory are presented.