Published in

Wiley, Angewandte Chemie International Edition, 27(48), p. 4982-4985, 2009

DOI: 10.1002/anie.200900426

Wiley, Angewandte Chemie, 27(121), p. 5082-5085, 2009

DOI: 10.1002/ange.200900426

Links

Tools

Export citation

Search in Google Scholar

Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates

Journal article published in 2009 by Lianbing Zhang, Avinash J. Patil, Le Li, Angelika Schierhorn, Stephen Mann ORCID, Ulrich Gösele, Mato Knez
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).