Published in
American Physical Society, Physical review B, 6(88)
DOI: 10.1103/physrevb.88.064422
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Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge)3
Journal article published in 2013 by
David J. Singh
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Abstract
The electronic structure and magnetic properties of FeGa3 and doped FeGa3 are studied using density functional calculations. An itinerant mechanism for ferromagnetism is found both for n-type doping with Ge and also for p-type doping. Boltzmann transport calculations of the thermopower are also reported.