Elsevier, Physics Procedia, (75), p. 565-571, 2015
DOI: 10.1016/j.phpro.2015.12.072
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A 460nm thick amorphous SiO2 layer, formed on a Si (100) surface by air-annealing the Si substrate at 1100oC for 24h, was implanted with 57Fe to a fluence of 1 x 1016/cm2 at room temperature and annealed at temperatures up to 1000oC. The implanted and annealed samples were studied by conversion electron Mössbauer spectroscopy (CEMS) and magnetization measurements.