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American Physical Society, Physical review B, 23(84)

DOI: 10.1103/physrevb.84.233301

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Determination of the Poisson ratio of (001) and (111) oriented thin films ofIn2O3by synchrotron-based x-ray diffraction

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The Poisson ratio ν of In2O3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.