American Physical Society, Physical review B, 23(84)
DOI: 10.1103/physrevb.84.233301
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The Poisson ratio ν of In2O3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.