Published in
Instytut Podstaw Informatyki, Acta Physica Polonica A, 5(128), p. 891-894, 2015
DOI: 10.12693/aphyspola.128.891
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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes
Journal article published in 2015 by
N. A. Poklonski,
N. I. Gorbachuk,
VoQuang Nha,
S. V. Shpakovski,
V. A. Filipenya,
V. A. Skuratov,
T. N. Kołtunowicz 
,
N. Kukharchyk,
H.-W. Becker,
A. Wieck
,
N. Kukharchyk,
H.-W. Becker,
A. Wieck
This paper is made freely available by the publisher.
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Abstract
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.