Published in
American Institute of Physics, Applied Physics Letters, 17(95), p. 173502
DOI: 10.1063/1.3253419
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Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells
,
M. Bär,
S. Lehmann,
S. Sadewasser,
L. Weinhardt ,
C. A. Kaufmann,
E. Strub,
J. Röhrich,
W. Bohne,
I. Lauermann ,
C.-H. Jung,
C. Heske,
M. C.-H. Lux-Steiner
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Abstract
The chemical structure of the CdS CuGaSe2 chalcopyrite solar cell buffer absorber interface is investigated by combining element depth profiling using elastic recoil detection analysis and surface near bulk sensitive x ray emission spectroscopy. Significant Cd and S concentrations gt; 0.1 at. are found deep in the absorber bulk. The determined high Cd and S diffusion coefficient values at 333 K of 3.6 and 3.4 x 10 12 cm2 s, resp., are attributed to diffusion along CuGaSe2 grain boundaries. As a result, a three dimensional buffer absorber interface geometry is proposed