American Institute of Physics, Applied Physics Letters, 17(95), p. 173502
DOI: 10.1063/1.3253419
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The chemical structure of the CdS CuGaSe2 chalcopyrite solar cell buffer absorber interface is investigated by combining element depth profiling using elastic recoil detection analysis and surface near bulk sensitive x ray emission spectroscopy. Significant Cd and S concentrations gt; 0.1 at. are found deep in the absorber bulk. The determined high Cd and S diffusion coefficient values at 333 K of 3.6 and 3.4 x 10 12 cm2 s, resp., are attributed to diffusion along CuGaSe2 grain boundaries. As a result, a three dimensional buffer absorber interface geometry is proposed