ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p-type conductiv-ity with the hole concentration of ~5·10 19 cm –3 for ZnO:As and ZnO:As:N on GaAs substrates and ~ 6·10 17 cm –3 for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between sam-ples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples. 1 Introduction ZnO-based semiconductors hold great promise for future optoelectronic applications due to their wide band gap and a large excitonic binding energy. Undoped ZnO is usually n-type, which is associated with native point defects (V o and Zn i) [1] and/or residual hydrogen. On the other hand, Mn doped p-type ZnO is predicted to be ferromagnetic with the Curie temperature reaching 300 K [2]. Therefore, recently, many groups achieved p-type ZnO by doping with group V elements (N, P, As, Sb) [3–6]. It has been shown that nitrogen has a simple substitutional character, while As forms more com-plicated acceptor complexes. In this work we obtain p-type ZnO and ZnMnO by oxidation of ZnTe and ZnMnTe MBE-grown layers. The hole concentration achieved by doping with N and/or As reached ~10 19 cm –3 provided that the growth took place on GaAs substrates. We present the results of the meas-urements of the Hall effect and photoluminescence (PL) as a function of the magnetic field.