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Wiley, Advanced Materials, 1(25), p. 109-114, 2012

DOI: 10.1002/adma.201203346

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Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

Journal article published in 2012 by Sivacarendran Balendhran, Junkai Deng, Jian Zhen Ou, Sumeet Walia, James Scott, Jianshi Tang ORCID, Kang L. Wang, Matthew R. Field ORCID, Salvy Russo, Michael S. Strano, Serge Zhuiykov, Nikhil Medhekar ORCID, Sharath Sriram, Madhu Bhaskaran, Kourosh Kalantar-Zadeh ORCID
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This paper is available in a repository.

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Abstract

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.