American Institute of Physics, Applied Physics Letters, 7(81), p. 1186
DOI: 10.1063/1.1500776
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In this letter, we report on the optical properties of multistacked Ge quantum dots grown on Si(001). We demonstrate that the two emission bands observed in the photoluminescence spectra are related to the presence of strained and relaxed islands. Within both types of islands, the experimental findings support the hypothesis of the presence of quantum confining regions whose dimensions are governed by the strain relaxation process. (C) 2002 American Institute of Physics.