A study was conducted to demonstrate the physical properties of amorphous thin-film p-CuO/n-InZnOx heterojunction diodes that can be used as a switch element in high-density cross-point resistive memory. The study demonstrated that the film is applicable to a stackable structure or polymer memory,as it is deposited at room temperature. It was demonstrated that the diode shows significant rectification properties, such as a forward current density of 3.5 × 104 A cm-2 and a rectifying ratio of 106 at ∓2.45 V. The composition of each layer of of the CuO and IZO films grown on SiO2/Si substrates,was confirmed by Rutherford backscattering spectroscopy (RBS).