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American Institute of Physics, Applied Physics Letters, 6(92), p. 062910

DOI: 10.1063/1.2842418

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Epitaxial (001) BiFeO3 Membranes With Substantially Reduced Fatigue and Leakage

Journal article published in 2008 by H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, C. B. Eom, Y. H. Chu ORCID, P. Shafer ORCID, R. Ramesh, V. Vaithyanathan, D. G. Schlom
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We report substantially reduced fatigue and electrical leakage in Bi Fe O 3 membranes fabricated by releasing epitaxial (001) Bi Fe O 3 films from the Si substrates on which they were grown. Fatigue-free switching behavior of up to 1010 cycles was observed for Bi Fe O 3 membranes with Pt top electrodes, while as-grown films break down at ∼109 cycles . This is attributed to the low coercive field of Bi Fe O 3 membranes and their being free from substrate clamping. In contrast, (111) Bi Fe O 3 films exhibit significant fatigue at the same electric field. Epitaxial (001) Bi Fe O 3 membranes with low coercive field are very promising for lead-free ferroelectric memory and magnetoelectric devices.