Recently observed photoluminescence (PL) in ZnO, positioned at 3.324 eV and known to be related to Ge impurities, is investigated here by uniaxial stress and Zeeman spectroscopy measurements. The 3.324 eV PL line shifts but does not split under uniaxial stress both parallel and perpendicular to the c-axis, indicating trigonal defect symmetry. This reinforces the findings of prior work that the defect centre is related to a substitutional Ge impurity in ZnO. Applied magnetic fields result in linear splittings of the line into two components for fields parallel and perpendicular to the c-axis. This result combined with the temperature dependence of the Zeeman spectra enables the line to be assigned to neutral donor bound exciton recombination. Some possible models for the defect are considered.