For pt.I see ibid., vol.16, p.6499 (1983). By means of a self-consistent tight-binding method, a realistic calculation of a Si-H-Ag junction is made. More general cases for different interlayer atoms are analysed by changing the parameters of the interface. The authors' results show that the barrier height of the junction may have slightly changed values (by up to 0.2 eV) for different atom electronegativities. For atoms of low (high) electronegativity, they find larger (smaller) barrier heights.