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Taylor and Francis Group, Ferroelectrics Letters Section, 1-3(42), p. 65-74

DOI: 10.1080/07315171.2015.1026215

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Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO<sub>2</sub>/Si Substrate

Journal article published in 2015 by Do Hong Minh, Bui Nguyen Quoc Trinh ORCID
Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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