Published in
2015 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/iedm.2015.7409742
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- Institute of Electrical and Electronics Engineers
- [researchonline.ljmu.ac.uk] | PDF
- [www.researchgate.net] | PDF
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Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Proceedings article published in 2015 by
M. Duan,
Jf F. Zhang 
,
A. Manut,
Z. Ji,
W. Zhang ,
A. Asenov,
L. Gerrer,
D. Reid,
H. Razaidi,
D. Vigar,
V. Chandra,
R. Aitken,
B. Kaczer,
G. Groeseneken
,
A. Manut,
Z. Ji,
W. Zhang ,
A. Asenov,
L. Gerrer,
D. Reid,
H. Razaidi,
D. Vigar,
V. Chandra,
R. Aitken,
B. Kaczer,
G. Groeseneken
This paper is available in a repository.
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