Published in

American Institute of Physics, Journal of Applied Physics, 7(105), p. 07C708

DOI: 10.1063/1.3068468

Links

Tools

Export citation

Search in Google Scholar

Effects of carrier mobility and morphology in organic semiconductor spin valves

Journal article published in 2009 by Yaohua Liu ORCID, Taegweon Lee, Howard E. Katz, Daniel H. Reich
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO

Abstract

We studied spin transport in four organic semiconductors (OSCs) with different electronic properties, with Fe and Co as the top and bottom ferromagnetic (FM) contacts, respectively. Magnetoresistance (MR) effects were observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq$_3$) and a hole-carrying OSC, copper phthalocyanine (CuPc). The MR shows similar temperature dependence for these two OSCs, which suggests that the FM leads rather than the OSCs play a dominant role on the spin-transport degradation with increasing temperature. We also investigated junctions based on two high lateral mobility electron-carrying OSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N, N'-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF$_3$-NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq$_3$ or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration. ; Comment: 4 pages, The 53rd Annual Conference On Magnetism And Magnetic Materials