Published in
American Institute of Physics, Journal of Applied Physics, 4(118), p. 043104, 2015
DOI: 10.1063/1.4927421
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Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes
Journal article published in 2015 by
Shih-Wei Feng,
Po-Hsun Liao,
Benjamin Leung,
Jung Han,
Fann-Wei Yang,
Hsiang-Chen Wang 
This paper was not found in any repository, but could be made available legally by the author.
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