Published in
American Institute of Physics, Journal of Applied Physics, 1(118), p. 015707
DOI: 10.1063/1.4926429
Links
Tools
Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation
Journal article published in 2015 by
Christoph Bergmann,
Alexander Gröschel,
Johannes Will 
,
Andreas Magerl
,
Andreas Magerl
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 