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American Institute of Physics, Applied Physics Letters, 16(106), p. 163501, 2015

DOI: 10.1063/1.4918649

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An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed

Journal article published in 2015 by Kamal Karda, Ankit Jain, Chandra Mouli, Muhammad Ashraful Alam ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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