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American Institute of Physics, Journal of Applied Physics, 13(117), p. 134105

DOI: 10.1063/1.4916715

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TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

Journal article published in 2015 by Patrick D. Lomenzo, Qanit Takmeel, Chuanzhen Zhou ORCID, Chris M. Fancher ORCID, Eric Lambers ORCID, Nicholas G. Rudawski, Jacob L. Jones ORCID, Saeed Moghaddam, Toshikazu Nishida
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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