Published in
American Institute of Physics, Journal of Applied Physics, 11(117), p. 115705, 2015
DOI: 10.1063/1.4915628
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Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
Journal article published in 2015 by
M. J. Wallace,
P. R. Edwards 
,
M. J. Kappers,
M. A. Hopkins,
F. Oehler ,
S. Sivaraya,
R. A. Oliver ,
C. J. Humphreys,
D. W. E. Allsopp,
R. W. Martin
,
M. J. Kappers,
M. A. Hopkins,
F. Oehler ,
S. Sivaraya,
R. A. Oliver ,
C. J. Humphreys,
D. W. E. Allsopp,
R. W. Martin
This paper is made freely available by the publisher.
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