Published in
American Institute of Physics, Applied Physics Letters, 5(106), p. 051605, 2015
DOI: 10.1063/1.4907861
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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Journal article published in 2015 by
Shenghou Liu 
,
Shu Yang ,
Zhikai Tang ,
Qimeng Jiang,
Cheng Liu ,
Maojun Wang,
Bo Shen,
Kevin J. Chen
,
Shu Yang ,
Zhikai Tang ,
Qimeng Jiang,
Cheng Liu ,
Maojun Wang,
Bo Shen,
Kevin J. Chen
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