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American Institute of Physics, Journal of Applied Physics, 5(117), p. 055705, 2015

DOI: 10.1063/1.4907210

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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Journal article published in 2015 by Konstantinos Pantzas ORCID, Gilles Patriarche ORCID, David Troadec, Mathieu Kociak, Nikolay Cherkashin ORCID, Martin Hÿtch, Julien Barjon, Christian Tanguy, Thomas Rivera ORCID, Sundaram Suresh, Abdallah Ougazzaden
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This paper is available in a repository.

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Abstract

Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous.