Published in
American Institute of Physics, Journal of Applied Physics, 5(117), p. 055705, 2015
DOI: 10.1063/1.4907210
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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys
,
Gilles Patriarche ,
David Troadec,
Mathieu Kociak,
Nikolay Cherkashin ,
Martin Hÿtch,
Julien Barjon,
Christian Tanguy,
Thomas Rivera ,
Sundaram Suresh,
Abdallah Ougazzaden
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Abstract
Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous.