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American Physical Society, Physical review B, 7(88), 2013

DOI: 10.1103/physrevb.88.075116

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Strain-modulated Mott transition in EuNiO3ultrathin films

This paper is available in a repository.
This paper is available in a repository.

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Abstract

A series of ultrathin epitaxial films of EuNiO3 (ENO) were grown on a set of substrates traversing from compressive (−2.4%) to tensile (+2.5%) lattice mismatch. On moving from tensile to compressive strain, transport measurements demonstrate a successively suppressed Mott insulating behavior eventually resulting in a complete suppression of the insulating state at high compressive strain. Corroborating these findings, resonant soft x-ray absorption spectroscopy at the Ni L3,2 edge reveals the presence of a strong multiplet splitting in the tensile strained samples that progressively weakens with increasing compressive strain. Combined with cluster calculations, the results show how cumulatively enhanced covalency (i.e., bandwidth) between Ni d and O p orbital derived states leads to the emergent metallic ground state not attainable in the bulk ENO.